JANTX2N7236 vs JANTXV2N2857

對 JANTX2N7236 和 JANTXV2N2857 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

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Specification JANTX2N7236 JANTXV2N2857
Supplier - Microchip Technology
Series Military, MIL-PRF-19500/595 Military, MIL-PRF-19500/343
Part Status Obsolete Obsolete
Transistor Type - NPN
Voltage - Collector Emitter Breakdown(Max) - 15V
Frequency - Transition - 500MHz
Noise Figure(d B Typ @ f) - 4.5dB @ 450MHz
Gain - 12.5dB ~ 21dB @ 450MHz
Power - Max - 200mW
DC Current Gain(h FE)(Min) @ Ic Vce - 30 @ 3mA, 1V
Current - Collector(Ic)(Max) - 40mA
Operating Temperature -55°C ~ 150°C (TJ) -65°C ~ 200°C (TJ)
Mounting Type Through Hole Through Hole
FET Type P-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 100 V -
Current - Continuous Drain(Id) @ 25°C 18A (Tc) -
Drive Voltage(Max Rds On Min Rds On) 10V -
Rds On(Max) @ Id Vgs 220mOhm @ 18A, 10V -
Vgs(th)(Max) @ Id 4V @ 250µA -
Gate Charge(Qg)(Max) @ Vgs 60 nC @ 10 V -
Vgs(Max) ±20V -
Power Dissipation (Max) 4W (Ta), 125W (Tc) -
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