JANTX2N6796 vs JANTX2N2060

對 JANTX2N6796 和 JANTX2N2060 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

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Specification JANTX2N6796 JANTX2N2060
Supplier - Microchip Technology
Series Military, MIL-PRF-19500/557 Military, MIL-PRF-19500/270
Part Status Obsolete Active
Transistor Type - 2 NPN (Dual)
Current - Collector(Ic)(Max) - 500mA
Voltage - Collector Emitter Breakdown(Max) - 60V
Vce Saturation(Max) @ Ib Ic - 300mV @ 5mA, 50mA
Current - Collector Cutoff(Max) - 10µA (ICBO)
DC Current Gain(h FE)(Min) @ Ic Vce - 50 @ 10mA, 5V
Power - Max - 600mW
Operating Temperature -55°C ~ 150°C (TJ) -65°C ~ 200°C (TJ)
Mounting Type Through Hole Through Hole
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 100 V -
Current - Continuous Drain(Id) @ 25°C 8A (Tc) -
Drive Voltage(Max Rds On Min Rds On) 10V -
Rds On(Max) @ Id Vgs 195mOhm @ 8A, 10V -
Vgs(th)(Max) @ Id 4V @ 250µA -
Gate Charge(Qg)(Max) @ Vgs 28.51 nC @ 10 V -
Vgs(Max) ±20V -
Power Dissipation (Max) 800mW (Ta), 25W (Tc) -
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