IXDN602SIA vs IXDN604SITR

對 IXDN602SIA 和 IXDN604SITR 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IXDN602SIA IXDN604SITR
Part Status Active Active
Driven Configuration Low-Side Low-Side
Channel Type Independent Independent
Number of Drivers 2 2
Gate Type IGBT, N-Channel, P-Channel MOSFET IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply 4.5V ~ 35V 4.5V ~ 35V
Logic Voltage - VILVIH 0.8V, 3V 0.8V, 3V
Current - Peak Output(Source Sink) 2A, 2A 4A, 4A
Input Type Non-Inverting Non-Inverting
Rise / Fall Time(Typ) 7.5ns, 6.5ns 9ns, 8ns
Operating Temperature -55°C ~ 150°C (TJ) -40°C ~ 125°C (TA)
Mounting Type Surface Mount Surface Mount
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