IRLML6402TRPBF vs IRLML6246TRPBF

對 IRLML6402TRPBF 和 IRLML6246TRPBF 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

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Specification IRLML6402TRPBF IRLML6246TRPBF
Series HEXFET® HEXFET®
Part Status Last Time Buy Active
Base Product Number IRLML6402 -
FET Type P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 3.7A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V -
Rds On (Max) @ Id, Vgs 65mOhm @ 3.7A, 4.5V -
Vgs(th) (Max) @ Id 1.2V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 5 V -
Vgs (Max) ±12V -
Input Capacitance (Ciss) (Max) @ Vds 633 pF @ 10 V -
Power Dissipation (Max) 1.3W (Ta) 1.3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Packaging Cut Tape (CT), Tape & Reel (TR) -
Current - Continuous Drain(Id) @ 25°C - 4.1A (Ta)
Drive Voltage(Max Rds On Min Rds On) - 2.5V, 4.5V
Rds On(Max) @ Id Vgs - 46mOhm @ 4.1A, 4.5V
Vgs(th)(Max) @ Id - 1.1V @ 5µA
Gate Charge(Qg)(Max) @ Vgs - 3.5 nC @ 4.5 V
Vgs(Max) - ±12V
Input Capacitance(Ciss)(Max) @ Vds - 290 pF @ 16 V
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