IRG4PH50UDPBF vs IRG4PH50S-EPBF

對 IRG4PH50UDPBF 和 IRG4PH50S-EPBF 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

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Specification IRG4PH50UDPBF IRG4PH50S-EPBF
Supplier - Rochester Electronics, LLC,Infineon Technologies
Part Status Obsolete Obsolete
Voltage - Collector Emitter Breakdown(Max) 1200 V 1200 V
Current - Collector(Ic)(Max) 45 A 57 A
Current - Collector Pulsed(Icm) 180 A 114 A
Vce(on)(Max) @ Vge Ic 3.7V @ 15V, 24A 1.7V @ 15V, 33A
Power - Max 200 W 200 W
Switching Energy 2.1mJ (on), 1.5mJ (off) 1.8mJ (on), 19.6mJ (off)
Input Type Standard Standard
Gate Charge 160 nC 167 nC
Td(on / off) @ 25°C 47ns/110ns 32ns/845ns
Test Condition 800V, 24A, 5Ohm, 15V 960V, 33A, 5Ohm, 15V
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Reverse Recovery Time (trr) 90 ns -
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