IRFP460PBF vs IRFP4768PBF
對 IRFP4768PBF 和 IRFP460PBF 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。如需更多信息，請參閱其數據手冊或聯繫我們的銷售團隊，我們將協助您選擇適合您設計的元件。
包裹
TO-247-3
描述
MOSFET N-CH 250V 93A TO247AC
MOSFET N-CH 500V 20A TO247AC
Series
HEXFET®
HEXFET®
Part Status
Last Time Buy
-
Base Product Number
IRFP4768
-
FET Type
N-Channel
-
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
-
Current - Continuous Drain (Id) @ 25°C
93A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On)
10V
-
Rds On (Max) @ Id, Vgs
17.5mOhm @ 56A, 10V
-
Vgs(th) (Max) @ Id
5V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs
270 nC @ 10 V
-
Vgs (Max)
±20V
-
Input Capacitance (Ciss) (Max) @ Vds
10880 pF @ 50 V
-
Power Dissipation (Max)
520W (Tc)
-
Operating Temperature
-55°C ~ 175°C (TJ)
-
Mounting Type
Through Hole
-
Packaging
Tube
-
ProductStatus
-
Last Time Buy
FETType
-
N-Channel
DraintoSourceVoltage(Vdss)
-
500 V
Current-ContinuousDrain(Id)@25°C
-
20A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)
-
10V
RdsOn(Max)@IdVgs
-
270mOhm @ 12A, 10V
Vgs(th)(Max)@Id
-
4V @ 250µA
GateCharge(Qg)(Max)@Vgs
-
210 nC @ 10 V
Vgs(Max)
-
±20V
InputCapacitance(Ciss)(Max)@Vds
-
4200 pF @ 25 V
PowerDissipation(Max)
-
280W (Tc)
OperatingTemperature
-
-55°C ~ 150°C (TJ)
MountingType
-
Through Hole
