IRFB3307ZPBF vs IRFB3077PBF

對 IRFB3307ZPBF 和 IRFB3077PBF 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

詢價 Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRFB3307ZPBF IRFB3077PBF
Part Status Active Active
Series - HEXFET®
FET Type - N-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 75 V
Current - Continuous Drain(Id) @ 25°C - 120A (Tc)
Drive Voltage(Max Rds On Min Rds On) - 10V
Rds On(Max) @ Id Vgs - 3.3mOhm @ 75A, 10V
Vgs(th)(Max) @ Id - 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 220 nC @ 10 V
Vgs(Max) - ±20V
Input Capacitance(Ciss)(Max) @ Vds - 9400 pF @ 50 V
Power Dissipation (Max) - 370W (Tc)
Operating Temperature - -55°C ~ 175°C (TJ)
Mounting Type - Through Hole
Compare 詢價