IRF7854TRPBF vs IRF7815TRPBF

對 IRF7854TRPBF 和 IRF7815TRPBF 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRF7854TRPBF IRF7815TRPBF
Series HEXFET® HEXFET®
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 150 V
Current - Continuous Drain(Id) @ 25°C - 5.1A (Ta)
Drive Voltage(Max Rds On Min Rds On) - 10V
Rds On(Max) @ Id Vgs - 43mOhm @ 3.1A, 10V
Vgs(th)(Max) @ Id - 5V @ 100µA
Gate Charge(Qg)(Max) @ Vgs - 38 nC @ 10 V
Vgs(Max) - ±20V
Input Capacitance(Ciss)(Max) @ Vds - 1647 pF @ 75 V
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Base Product Number IRF7854 -
Current - Continuous Drain (Id) @ 25°C 10A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 13.4mOhm @ 10A, 10V -
Vgs(th) (Max) @ Id 4.9V @ 100µA -
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 1620 pF @ 25 V -
Packaging Cut Tape (CT), Tape & Reel (TR) -
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