Part A
IRF7495TRPBF
英飛淩科技
- Lifecycle
- Active
- Stock
- 5805 件
- Package
- SOIC-8
- Series
- 電晶體-FET、MOSFET-單
對 IRF7495TRPBF 和 IRF7413ZTRPBF 的深入比較,為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素,包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異,簡化了元件選擇,讓您更輕鬆地為您的特定應用選擇最佳方案。
英飛淩科技
英飛淩科技
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Use manufacturer datasheets as the final authority.
| Specification | IRF7495TRPBF | IRF7413ZTRPBF |
|---|---|---|
| Series | HEXFET® | HEXFET® |
| Part Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 7.3A (Ta) | 13A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 10V | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 22mOhm @ 4.4A, 10V | 10mOhm @ 13A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA | 2.25V @ 25µA |
| Gate Charge(Qg)(Max) @ Vgs | 51 nC @ 10 V | 14 nC @ 4.5 V |
| Vgs(Max) | ±20V | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1530 pF @ 25 V | 1210 pF @ 15 V |
| Power Dissipation (Max) | 2.5W (Ta) | 2.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |