IR21271STRPBF vs IR2128S

對 IR21271STRPBF 和 IR2128S 的深入比較,為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素,包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異,簡化了元件選擇,讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

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Specification IR21271STRPBF IR2128S
Part Status Active Obsolete
Driven Configuration High-Side or Low-Side High-Side or Low-Side
Channel Type Single Single
Number of Drivers 1 1
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 9V ~ 20V 12V ~ 20V
Logic Voltage - VILVIH 0.8V, 3V 0.8V, 3V
Current - Peak Output(Source Sink) 250mA, 500mA 250mA, 500mA
Input Type Non-Inverting Inverting
High Side Voltage - Max(Bootstrap) 600 V 600 V
Rise / Fall Time(Typ) 80ns, 40ns 80ns, 40ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount