IR2110PBF vs IR2110-1

對 IR2110PBF 和 IR2110-1 的深入比較,為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素,包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異,簡化了元件選擇,讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IR2110PBF IR2110-1
Part Status Active Obsolete
Driven Configuration Half-Bridge Half-Bridge
Channel Type Independent Independent
Number of Drivers 2 2
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 3.3V ~ 20V 3.3V ~ 20V
Logic Voltage - VILVIH 6V, 9.5V 6V, 9.5V
Current - Peak Output(Source Sink) 2A, 2A 2A, 2A
Input Type Non-Inverting Non-Inverting
High Side Voltage - Max(Bootstrap) 500 V 500 V
Rise / Fall Time(Typ) 25ns, 17ns 25ns, 17ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole