FGH40N60SMDF vs FGH40N65UFDTU

對 FGH40N60SMDF 和 FGH40N65UFDTU 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

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Specification FGH40N60SMDF FGH40N65UFDTU
Supplier - Rochester Electronics, LLC,onsemi
Part Status Active Obsolete
IGBT Type Field Stop Field Stop
Voltage - Collector Emitter Breakdown(Max) 600 V 650 V
Current - Collector(Ic)(Max) 80 A 80 A
Current - Collector Pulsed(Icm) 120 A 120 A
Vce(on)(Max) @ Vge Ic 2.5V @ 15V, 40A 2.4V @ 15V, 40A
Power - Max 349 W 290 W
Switching Energy 1.3mJ (on), 260µJ (off) 1.19mJ (on), 460µJ (off)
Input Type Standard Standard
Gate Charge 119 nC 120 nC
Td(on / off) @ 25°C 12ns/92ns 24ns/112ns
Test Condition 400V, 40A, 6Ohm, 15V 400V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr) 90 ns 45 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
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