FGA40T65SHD vs FGA40T65UQDF

對 FGA40T65SHD 和 FGA40T65UQDF 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

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Specification FGA40T65SHD FGA40T65UQDF
Supplier - onsemi
Part Status Active Obsolete
IGBT Type Trench Field Stop NPT
Voltage - Collector Emitter Breakdown(Max) 650 V 650 V
Current - Collector(Ic)(Max) 80 A 80 A
Current - Collector Pulsed(Icm) 120 A 120 A
Vce(on)(Max) @ Vge Ic 2.1V @ 15V, 40A 1.67V @ 15V, 40A
Power - Max 268 W 231 W
Switching Energy 1.01mJ (on), 297µJ (off) 989µJ (on), 310µJ (off)
Input Type Standard Standard
Gate Charge 72.2 nC 306 nC
Td(on / off) @ 25°C 19.2ns/65.6ns 32ns/271ns
Test Condition 400V, 40A, 6Ohm, 15V 400V, 40A, 6Ohm, 15V
Reverse Recovery Time (trr) 31.8 ns 89 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
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