FDY302NZ vs FDY3001NZ

對 FDY302NZ 和 FDY3001NZ 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

ISO9001 Quality Control ISO45001 ISO14001 100% Genuine

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification FDY302NZ FDY3001NZ
Supplier - onsemi
Series PowerTrench® PowerTrench®
Part Status Active Obsolete
FET Type N-Channel 2 N-Channel (Dual)
FET Feature - Logic Level Gate
Drain to Source Voltage (Vdss) 20 V 20V
Current - Continuous Drain(Id) @ 25°C 600mA (Ta) 200mA
Rds On(Max) @ Id Vgs 300mOhm @ 600mA, 4.5V 5Ohm @ 200mA, 4.5V
Vgs(th)(Max) @ Id 1.5V @ 250µA 1.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 1.1 nC @ 4.5 V 1.1nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds 60 pF @ 10 V 60pF @ 10V
Power - Max - 446mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Technology MOSFET (Metal Oxide) -
Drive Voltage(Max Rds On Min Rds On) 1.8V, 4.5V -
Vgs(Max) ±12V -
Power Dissipation (Max) 625mW (Ta) -
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