FDMS86520 vs FDMS8018
對 FDMS8018 和 FDMS86520 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。如需更多信息，請參閱其數據手冊或聯繫我們的銷售團隊，我們將協助您選擇適合您設計的元件。
包裹
PowerTDFN-8
描述
MOSFET N-CH 30V 30A/120A 8PQFN
MOSFET N-CH 60V 14A/42A 8PQFN
Series
PowerTrench®
PowerTrench®
Part Status
Active
-
Base Product Number
FDMS80
-
FET Type
N-Channel
-
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
-
Current - Continuous Drain (Id) @ 25°C
30A (Ta), 120A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
-
Rds On (Max) @ Id, Vgs
1.8mOhm @ 30A, 10V
-
Vgs(th) (Max) @ Id
3V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs
61 nC @ 10 V
-
Vgs (Max)
±20V
-
Input Capacitance (Ciss) (Max) @ Vds
5235 pF @ 15 V
-
Power Dissipation (Max)
2.5W (Ta), 83W (Tc)
-
Operating Temperature
-55°C ~ 150°C (TJ)
-
Mounting Type
Surface Mount
-
Packaging
Cut Tape (CT), Tape & Reel (TR)
-
ProductStatus
-
Active
FETType
-
N-Channel
DraintoSourceVoltage(Vdss)
-
60 V
Current-ContinuousDrain(Id)@25°C
-
14A (Ta), 42A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)
-
8V, 10V
RdsOn(Max)@IdVgs
-
7.4mOhm @ 14A, 10V
Vgs(th)(Max)@Id
-
4.5V @ 250µA
GateCharge(Qg)(Max)@Vgs
-
40 nC @ 10 V
Vgs(Max)
-
±20V
InputCapacitance(Ciss)(Max)@Vds
-
2850 pF @ 30 V
PowerDissipation(Max)
-
2.5W (Ta), 69W (Tc)
OperatingTemperature
-
-55°C ~ 150°C (TJ)
MountingType
-
Surface Mount
