FDMS8018 vs FDMS86150

對 FDMS8018 和 FDMS86150 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification FDMS8018 FDMS86150
Series PowerTrench® PowerTrench®
Part Status Active Active
Base Product Number FDMS80 -
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 100 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta), 120A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 1.8mOhm @ 30A, 10V -
Vgs(th) (Max) @ Id 3V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 61 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 5235 pF @ 15 V -
Power Dissipation (Max) 2.5W (Ta), 83W (Tc) 2.7W (Ta), 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Packaging Cut Tape (CT), Tape & Reel (TR) -
Current - Continuous Drain(Id) @ 25°C - 16A (Ta), 60A (Tc)
Drive Voltage(Max Rds On Min Rds On) - 6V, 10V
Rds On(Max) @ Id Vgs - 4.85mOhm @ 16A, 10V
Vgs(th)(Max) @ Id - 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 62 nC @ 10 V
Vgs(Max) - ±20V
Input Capacitance(Ciss)(Max) @ Vds - 4065 pF @ 50 V
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