FDMC8032L vs FDMC86116LZ
對 FDMC86116LZ 和 FDMC8032L 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。如需更多信息，請參閱其數據手冊或聯繫我們的銷售團隊，我們將協助您選擇適合您設計的元件。
包裹
PowerWDFN-8
描述
MOSFET N-CH 100V 3.3A/7.5A 8MLP
MOSFET 2N-CH 40V 7A 8-MLP
Series
PowerTrench®
PowerTrench®
Part Status
Active
-
Base Product Number
FDMC86116
-
FET Type
N-Channel
-
Technology
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss)
100 V
-
Current - Continuous Drain (Id) @ 25°C
3.3A (Ta), 7.5A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
-
Rds On (Max) @ Id, Vgs
103mOhm @ 3.3A, 10V
-
Vgs(th) (Max) @ Id
2.2V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 10 V
-
Vgs (Max)
±20V
-
Input Capacitance (Ciss) (Max) @ Vds
310 pF @ 50 V
-
Power Dissipation (Max)
2.3W (Ta), 19W (Tc)
-
Operating Temperature
-55°C ~ 150°C (TJ)
-
Mounting Type
Surface Mount
-
Packaging
Cut Tape (CT), Tape & Reel (TR)
-
ProductStatus
-
Active
FETType
-
2 N-Channel (Dual)
FETFeature
-
Logic Level Gate
DraintoSourceVoltage(Vdss)
-
40V
Current-ContinuousDrain(Id)@25°C
-
7A
RdsOn(Max)@IdVgs
-
20mOhm @ 7A, 10V
Vgs(th)(Max)@Id
-
3V @ 250µA
GateCharge(Qg)(Max)@Vgs
-
11nC @ 10V
InputCapacitance(Ciss)(Max)@Vds
-
720pF @ 20V
Power-Max
-
1.9W
OperatingTemperature
-
-55°C ~ 150°C (TJ)
MountingType
-
Surface Mount
