FDG6335N vs FDG6301N_D87Z

對 FDG6335N 和 FDG6301N_D87Z 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

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Specification FDG6335N FDG6301N_D87Z
Supplier - onsemi
Part Status Active Obsolete
FET Type - 2 N-Channel (Dual)
FET Feature - Logic Level Gate
Drain to Source Voltage (Vdss) - 25V
Current - Continuous Drain(Id) @ 25°C - 220mA
Rds On(Max) @ Id Vgs - 4Ohm @ 220mA, 4.5V
Vgs(th)(Max) @ Id - 1.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 0.4nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds - 9.5pF @ 10V
Power - Max - 300mW
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type - Surface Mount
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