FDG6321C vs FDG6302P

對 FDG6321C 和 FDG6302P 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

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Specification FDG6321C FDG6302P
Supplier onsemi onsemi
Part Status Active Obsolete
FET Type N and P-Channel 2 P-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 25V 25V
Current - Continuous Drain(Id) @ 25°C 500mA, 410mA 140mA
Rds On(Max) @ Id Vgs 450mOhm @ 500mA, 4.5V 10Ohm @ 140mA, 4.5V
Vgs(th)(Max) @ Id 1.5V @ 250µA 1.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 2.3nC @ 4.5V 0.31nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds 50pF @ 10V 12pF @ 10V
Power - Max 300mW 300mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
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