FDG6303N vs FDG6313N

對 FDG6303N 和 FDG6313N 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

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Specification FDG6303N FDG6313N
Supplier - Rochester Electronics, LLC
Part Status Obsolete Active
Base Product Number FDG6303 -
Technology MOSFET (Metal Oxide) -
Configuration 2 N-Channel (Dual) -
FET Feature Logic Level Gate -
Drain to Source Voltage (Vdss) 25V -
Current - Continuous Drain (Id) @ 25°C 500mA -
Rds On (Max) @ Id, Vgs 450mOhm @ 500mA, 4.5V -
Vgs(th) (Max) @ Id 1.5V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 2.3nC @ 4.5V -
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V -
Power - Max 300mW -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Packaging Cut Tape (CT), Tape & Reel (TR) -
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