FDC6333C vs FDC638P
對 FDC638P 和 FDC6333C 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。如需更多信息，請參閱其數據手冊或聯繫我們的銷售團隊，我們將協助您選擇適合您設計的元件。
包裹
SSOT-6
描述
MOSFET P-CH 20V 4.5A SUPERSOT6
MOSFET N/P-CH 30V 2.5A/2A SSOT6
Series
PowerTrench®
PowerTrench®
Part Status
Active
-
Base Product Number
FDC638
-
FET Type
P-Channel
-
Technology
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss)
20 V
-
Current - Continuous Drain (Id) @ 25°C
4.5A (Ta)
-
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
-
Rds On (Max) @ Id, Vgs
48mOhm @ 4.5A, 4.5V
-
Vgs(th) (Max) @ Id
1.5V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 4.5 V
-
Vgs (Max)
±8V
-
Input Capacitance (Ciss) (Max) @ Vds
1160 pF @ 10 V
-
Power Dissipation (Max)
1.6W (Ta)
-
Operating Temperature
-55°C ~ 150°C (TJ)
-
Mounting Type
Surface Mount
-
Packaging
Cut Tape (CT), Tape & Reel (TR)
-
ProductStatus
-
Active
FETType
-
N and P-Channel
FETFeature
-
Logic Level Gate
DraintoSourceVoltage(Vdss)
-
30V
Current-ContinuousDrain(Id)@25°C
-
2.5A, 2A
RdsOn(Max)@IdVgs
-
95mOhm @ 2.5A, 10V
Vgs(th)(Max)@Id
-
3V @ 250µA
GateCharge(Qg)(Max)@Vgs
-
6.6nC @ 10V
InputCapacitance(Ciss)(Max)@Vds
-
282pF @ 15V
Power-Max
-
700mW
OperatingTemperature
-
-55°C ~ 150°C (TJ)
MountingType
-
Surface Mount
