ECH8668-TL-H vs ECH8619-TL-E

對 ECH8668-TL-H 和 ECH8619-TL-E 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification ECH8668-TL-H ECH8619-TL-E
Supplier onsemi onsemi
Part Status Obsolete Obsolete
FET Type N and P-Channel N and P-Channel
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 20V 60V
Current - Continuous Drain(Id) @ 25°C 7.5A, 5A 3A, 2A
Rds On(Max) @ Id Vgs 17mOhm @ 4A, 4.5V 93mOhm @ 1.5A, 10V
Gate Charge(Qg)(Max) @ Vgs 10.8nC @ 4.5V 12.8nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds 1060pF @ 10V 560pF @ 20V
Power - Max 1.5W 1.5W
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
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