DTC114YET1G vs DTC114EEBMGTL

對 DTC114YET1G 和 DTC114EEBMGTL 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

ISO9001 Quality Control ISO45001 ISO14001 100% Genuine
Part A

DTC114YET1G

安森美

Lifecycle
Active
Stock
3161 件
Package
SOT-416
Series
電晶體-雙極型電晶體（BJT）-單預偏置
+物料清單 詢價

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification DTC114YET1G DTC114EEBMGTL
Supplier onsemi Rohm Semiconductor
Part Status Active Active
Transistor Type NPN - Pre-Biased NPN - Pre-Biased
Current - Collector(Ic)(Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown(Max) 50 V 50 V
Resistor - Base(R1) 10 kOhms 10 kOhms
Resistor - Emitter Base(R2) 47 kOhms 10 kOhms
DC Current Gain(h FE)(Min) @ Ic Vce 80 @ 5mA, 10V 30 @ 5mA, 5V
Vce Saturation(Max) @ Ib Ic 250mV @ 300µA, 10mA 300mV @ 500µA, 10mA
Current - Collector Cutoff(Max) 500nA 500nA
Power - Max 200 mW 150 mW
Mounting Type Surface Mount Surface Mount
Series - DTC114E
Frequency - Transition - 250 MHz
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