DGD2190MS8-13 vs DGD2103S8-13

對 DGD2190MS8-13 和 DGD2103S8-13 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

詢價 Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification DGD2190MS8-13 DGD2103S8-13
Part Status Active Obsolete
Driven Configuration Half-Bridge Half-Bridge
Channel Type Independent Independent
Number of Drivers 2 2
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 20V 10V ~ 20V
Logic Voltage - VILVIH 0.8V, 2.5V 0.8V, 2.5V
Current - Peak Output(Source Sink) 4.5A, 4.5A 290mA, 600mA
Input Type Non-Inverting Inverting, Non-Inverting
High Side Voltage - Max(Bootstrap) 600 V 600 V
Rise / Fall Time(Typ) 25ns, 20ns 100ns, 35ns
Operating Temperature -40°C ~ 125°C (TA) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Compare 詢價