CSD87330Q3D vs CSD87335Q3D
對 CSD87335Q3D 和 CSD87330Q3D 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。如需更多信息，請參閱其數據手冊或聯繫我們的銷售團隊，我們將協助您選擇適合您設計的元件。
包裹
LDFN-8
描述
MOSFET 2N-CH 30V 8LSON
MOSFET 2N-CH 30V 20A 8SON
Series
NexFET™
NexFET™
Part Status
Active
-
Base Product Number
CSD87335Q3
-
Technology
MOSFET (Metal Oxide)
-
Configuration
2 N-Channel (Dual) Asymmetrical
-
Drain to Source Voltage (Vdss)
30V
-
Vgs(th) (Max) @ Id
1.9V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs
7.4nC @ 4.5V
-
Input Capacitance (Ciss) (Max) @ Vds
1050pF @ 15V
-
Power - Max
6W
-
Operating Temperature
-55°C ~ 150°C (TJ)
-
Mounting Type
Surface Mount
-
Packaging
Cut Tape (CT), Tape & Reel (TR)
-
ProductStatus
-
Active
FETType
-
2 N-Channel (Half Bridge)
FETFeature
-
Logic Level Gate
DraintoSourceVoltage(Vdss)
-
30V
Current-ContinuousDrain(Id)@25°C
-
20A
Vgs(th)(Max)@Id
-
2.1V @ 250µA
GateCharge(Qg)(Max)@Vgs
-
5.8nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds
-
900pF @ 15V
Power-Max
-
6W
OperatingTemperature
-
-55°C ~ 150°C (TJ)
MountingType
-
Surface Mount
