CSD87335Q3D vs CSD87330Q3D

對 CSD87335Q3D 和 CSD87330Q3D 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification CSD87335Q3D CSD87330Q3D
Series NexFET™ NexFET™
Part Status Active Active
Base Product Number CSD87335Q3 -
Technology MOSFET (Metal Oxide) -
Configuration 2 N-Channel (Dual) Asymmetrical -
Drain to Source Voltage (Vdss) 30V 30V
Vgs(th) (Max) @ Id 1.9V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 7.4nC @ 4.5V -
Input Capacitance (Ciss) (Max) @ Vds 1050pF @ 15V -
Power - Max 6W 6W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Packaging Cut Tape (CT), Tape & Reel (TR) -
FET Type - 2 N-Channel (Half Bridge)
FET Feature - Logic Level Gate
Current - Continuous Drain(Id) @ 25°C - 20A
Vgs(th)(Max) @ Id - 2.1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 5.8nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds - 900pF @ 15V
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