CSD17303Q5 vs CSD17308Q3

對 CSD17303Q5 和 CSD17308Q3 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

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Specification CSD17303Q5 CSD17308Q3
Series NexFET™ NexFET™
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain(Id) @ 25°C - 14A (Ta), 44A (Tc)
Drive Voltage(Max Rds On Min Rds On) - 3V, 8V
Rds On(Max) @ Id Vgs - 10.3mOhm @ 10A, 8V
Vgs(th)(Max) @ Id - 1.8V @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 5.1 nC @ 4.5 V
Vgs(Max) - +10V, -8V
Input Capacitance(Ciss)(Max) @ Vds - 700 pF @ 15 V
Power Dissipation (Max) 3.2W (Ta) 2.7W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Current - Continuous Drain (Id) @ 25°C 32A (Ta), 100A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 3V, 8V -
Rds On (Max) @ Id, Vgs 2.4mOhm @ 25A, 8V -
Vgs(th) (Max) @ Id 1.6V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 4.5 V -
Vgs (Max) +10V, -8V -
Input Capacitance (Ciss) (Max) @ Vds 3420 pF @ 15 V -
Packaging Bulk -
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