BYG10M-E3/TR vs BYG10Y-E3/TR

對 BYG10M-E3/TR 和 BYG10Y-E3/TR 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

BYG10M-E3/TR

Vishay General Semiconductor - 二極體部門

Lifecycle
Active
Stock
4670 件
Package
DO-214AC
Series
二極體-整流器-單
+物料清單 詢價
Part B

BYG10Y-E3/TR

Vishay General Semiconductor - 二極體部門

Lifecycle
Active
Stock
4402 件
Package
DO-214AC
Series
二極體-整流器-單
+物料清單 詢價

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification BYG10M-E3/TR BYG10Y-E3/TR
Supplier Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Part Status Active Active
Diode Type Avalanche Avalanche
Voltage - DC Reverse (Vr) (Max) 1000 V 1600 V
Current - Average Rectified(Io) 1.5A 1.5A
Voltage - Forward (Vf) (Max) @ If 1.15 V @ 1.5 A 1.15 V @ 1.5 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 4 µs 4 µs
Current - Reverse Leakage @ Vr 1 µA @ 1000 V 1 µA @ 1600 V
Mounting Type Surface Mount Surface Mount
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