Part A
BC857BDW1T1G
安森美
- Lifecycle
- Active
- Stock
- 6653 件
- Package
- SC-70
- Series
- 雙極電晶體（BJT）陣列
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | BC857BDW1T1G | BC857S |
|---|---|---|
| Supplier | - | Rochester Electronics, LLC |
| Series | - | Bulk |
| Transistor Type | 2 PNP (Dual) | Active |
| Part Status | Active | - |
| Current - Collector(Ic)(Max) | 100mA | - |
| Voltage - Collector Emitter Breakdown(Max) | 45V | - |
| Vce Saturation(Max) @ Ib Ic | 650mV @ 5mA, 100mA | - |
| Current - Collector Cutoff(Max) | 15nA (ICBO) | - |
| DC Current Gain(h FE)(Min) @ Ic Vce | 220 @ 2mA, 5V | - |
| Power - Max | 380mW | - |
| Frequency - Transition | 100MHz | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | - |
| Mounting Type | Surface Mount | - |