BC847CDW1T1G vs BC847BDW1T3

對 BC847CDW1T1G 和 BC847BDW1T3 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Specification BC847CDW1T1G BC847BDW1T3
Supplier onsemi Rochester Electronics, LLC
Part Status Active Obsolete
Transistor Type 2 NPN (Dual) 2 NPN (Dual)
Current - Collector(Ic)(Max) 100mA 100mA
Voltage - Collector Emitter Breakdown(Max) 45V 45V
Vce Saturation(Max) @ Ib Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff(Max) 15nA (ICBO) -
DC Current Gain(h FE)(Min) @ Ic Vce 420 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 380mW 250mW
Frequency - Transition 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
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