BC817-16LT1G vs BC817UPNB6327XT

對 BC817-16LT1G 和 BC817UPNB6327XT 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

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Specification BC817-16LT1G BC817UPNB6327XT
Supplier - Infineon Technologies
Part Status Active Discontinued at Digi-Key
Transistor Type NPN NPN, PNP
Current - Collector(Ic)(Max) 500 mA 500mA
Voltage - Collector Emitter Breakdown(Max) 45 V 45V
Vce Saturation(Max) @ Ib Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff(Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain(h FE)(Min) @ Ic Vce 100 @ 100mA, 1V 160 @ 100mA, 1V
Power - Max 300 mW 330mW
Frequency - Transition 100MHz 170MHz
Operating Temperature -65°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
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