BAS21AHT1G vs BAS21UE6359HTMA1

對 BAS21AHT1G 和 BAS21UE6359HTMA1 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

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Specification BAS21AHT1G BAS21UE6359HTMA1
Supplier onsemi,Rochester Electronics, LLC Infineon Technologies,Rochester Electronics, LLC
Series - Automotive, AEC-Q101
Part Status Active Last Time Buy
Diode Configuration - 3 Independent
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 250 V 200 V
Current - Average Rectified(Io)(per Diode) - 125mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1 V @ 100 mA
Speed Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns
Current - Reverse Leakage @ Vr 40 nA @ 200 V 100 nA @ 200 V
Operating Temperature - Junction - 150°C (Max)
Mounting Type Surface Mount Surface Mount
Current - Average Rectified(Io) 200mA (DC) -
Capacitance @ Vr F 5pF @ 0V, 1MHz -
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