AUIRF7341QTR vs AUIRF7343Q

對 AUIRF7341QTR 和 AUIRF7343Q 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification AUIRF7341QTR AUIRF7343Q
Supplier - Infineon Technologies
Series HEXFET® HEXFET®
Part Status Obsolete Obsolete
FET Type - N and P-Channel
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 55V 55V
Current - Continuous Drain(Id) @ 25°C - 4.7A, 3.4A
Rds On(Max) @ Id Vgs - 50mOhm @ 4.7A, 10V
Vgs(th)(Max) @ Id - 1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 36nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds - 740pF @ 25V
Power - Max 2.4W 2W
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Base Product Number AUIRF7341 -
Technology MOSFET (Metal Oxide) -
Configuration 2 N-Channel (Dual) -
Current - Continuous Drain (Id) @ 25°C 5.1A -
Rds On (Max) @ Id, Vgs 50mOhm @ 5.1A, 10V -
Vgs(th) (Max) @ Id 3V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V -
Input Capacitance (Ciss) (Max) @ Vds 780pF @ 25V -
Grade Automotive -
Qualification AEC-Q101 -
Packaging Tape & Reel (TR) -
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