APT30DQ120BG vs APT30GP60LDLG

對 APT30DQ120BG 和 APT30GP60LDLG 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

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Specification APT30DQ120BG APT30GP60LDLG
Supplier - Microchip Technology
Part Status Active Active
IGBT Type - PT
Voltage - Collector Emitter Breakdown(Max) - 600 V
Current - Collector(Ic)(Max) - 100 A
Current - Collector Pulsed(Icm) - 120 A
Vce(on)(Max) @ Vge Ic - 2.7V @ 15V, 30A
Power - Max - 463 W
Switching Energy - 260µJ (on), 250µJ (off)
Input Type - Standard
Gate Charge - 90 nC
Td(on / off) @ 25°C - 13ns/55ns
Test Condition - 400V, 30A, 5Ohm, 15V
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Diode Type Standard -
Voltage - DC Reverse (Vr) (Max) 1200 V -
Current - Average Rectified(Io) 30A -
Voltage - Forward (Vf) (Max) @ If 3.3 V @ 30 A -
Speed Fast Recovery =< 500ns, > 200mA (Io) -
Reverse Recovery Time (trr) 320 ns -
Current - Reverse Leakage @ Vr 100 µA @ 1200 V -
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