AON7404 vs AON7401
對 AON7401 和 AON7404 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。如需更多信息，請參閱其數據手冊或聯繫我們的銷售團隊，我們將協助您選擇適合您設計的元件。
包裹
PowerVDFN-8
描述
MOSFET P-CH 30V 12A/35A 8DFN
MOSFET N-CH 20V 20A/40A 8DFN
Part Status
Obsolete
-
Base Product Number
AON740
-
FET Type
P-Channel
-
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
-
Current - Continuous Drain (Id) @ 25°C
12A (Ta), 35A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
-
Rds On (Max) @ Id, Vgs
14mOhm @ 9A, 10V
-
Vgs(th) (Max) @ Id
3V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
-
Vgs (Max)
±25V
-
Input Capacitance (Ciss) (Max) @ Vds
2600 pF @ 15 V
-
Power Dissipation (Max)
3.1W (Ta), 29W (Tc)
-
Operating Temperature
-55°C ~ 150°C (TJ)
-
Mounting Type
Surface Mount
-
Packaging
Tape & Reel (TR)
-
ProductStatus
-
Not For New Designs
FETType
-
N-Channel
DraintoSourceVoltage(Vdss)
-
20 V
Current-ContinuousDrain(Id)@25°C
-
20A (Ta), 40A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)
-
2.5V, 4.5V
RdsOn(Max)@IdVgs
-
6mOhm @ 20A, 4.5V
Vgs(th)(Max)@Id
-
1.6V @ 250µA
GateCharge(Qg)(Max)@Vgs
-
43 nC @ 10 V
Vgs(Max)
-
±12V
InputCapacitance(Ciss)(Max)@Vds
-
4630 pF @ 10 V
PowerDissipation(Max)
-
3.1W (Ta), 40W (Tc)
OperatingTemperature
-
-55°C ~ 150°C (TJ)
MountingType
-
Surface Mount
