AON6994 vs AON6912ALS_102
對 AON6994 和 AON6912ALS_102 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。如需更多信息，請參閱其數據手冊或聯繫我們的銷售團隊，我們將協助您選擇適合您設計的元件。
包裹
VDFN-8
描述
MOSFET 2N-CH 30V 19A/26A 8DFN
MOSFET N-CH
Part Status
Obsolete
-
Base Product Number
AON699
-
Technology
MOSFET (Metal Oxide)
-
Configuration
2 N-Channel (Dual) Asymmetrical
-
FET Feature
Logic Level Gate
-
Drain to Source Voltage (Vdss)
30V
-
Current - Continuous Drain (Id) @ 25°C
19A, 26A
-
Rds On (Max) @ Id, Vgs
5.2mOhm @ 20A, 10V
-
Vgs(th) (Max) @ Id
2.2V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs
13nC @ 10V
-
Input Capacitance (Ciss) (Max) @ Vds
820pF @ 15V
-
Power - Max
3.1W
-
Operating Temperature
-55°C ~ 150°C (TJ)
-
Mounting Type
Surface Mount
-
Packaging
Cut Tape (CT), Tape & Reel (TR)
-
Supplier
-
Alpha & Omega Semiconductor Inc.
ProductStatus
-
Obsolete
FETType
-
2 N-Channel (Dual) Asymmetrical
FETFeature
-
Standard
DraintoSourceVoltage(Vdss)
-
30V
Current-ContinuousDrain(Id)@25°C
-
10A (Ta), 34A (Tc), 13.8A (Ta), 52A (Tc)
RdsOn(Max)@IdVgs
-
13.7mOhm @ 10A, 10V, 7.3mOhm @ 20A, 10V
Vgs(th)(Max)@Id
-
2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs
-
17nC @ 10V, 20nC @ 10V
InputCapacitance(Ciss)(Max)@Vds
-
910pF @ 15V, 1300pF @ 15V
Power-Max
-
1.9W (Ta), 22W (Tc), 2.1W (Ta), 30W (Tc)
OperatingTemperature
-
-55°C ~ 150°C (TJ)
MountingType
-
Surface Mount
