AOD413A vs AOD4132
對 AOD4132 和 AOD413A 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。如需更多信息，請參閱其數據手冊或聯繫我們的銷售團隊，我們將協助您選擇適合您設計的元件。
包裹
TO-252-3
描述
MOSFET N-CH 30V 85A TO252
MOSFET P-CH 40V 12A TO252
Part Status
Active
-
Base Product Number
AOD41
-
FET Type
N-Channel
-
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
-
Current - Continuous Drain (Id) @ 25°C
85A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
-
Rds On (Max) @ Id, Vgs
4mOhm @ 20A, 10V
-
Vgs(th) (Max) @ Id
3V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs
76 nC @ 10 V
-
Vgs (Max)
±20V
-
Input Capacitance (Ciss) (Max) @ Vds
4400 pF @ 15 V
-
Power Dissipation (Max)
2.5W (Ta), 100W (Tc)
-
Operating Temperature
-55°C ~ 175°C (TJ)
-
Mounting Type
Surface Mount
-
Packaging
Cut Tape (CT), Tape & Reel (TR)
-
ProductStatus
-
Active
FETType
-
P-Channel
DraintoSourceVoltage(Vdss)
-
40 V
Current-ContinuousDrain(Id)@25°C
-
12A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)
-
4.5V, 10V
RdsOn(Max)@IdVgs
-
44mOhm @ 12A, 10V
Vgs(th)(Max)@Id
-
3V @ 250µA
GateCharge(Qg)(Max)@Vgs
-
21 nC @ 10 V
Vgs(Max)
-
±20V
InputCapacitance(Ciss)(Max)@Vds
-
1125 pF @ 20 V
PowerDissipation(Max)
-
2.5W (Ta), 50W (Tc)
OperatingTemperature
-
-55°C ~ 175°C (TJ)
MountingType
-
Surface Mount
