Part A
AO3401
阿爾法歐米茄電晶體股份有限公司。
- Lifecycle
- Active
- Stock
- 6918 件
- Package
- SOT-23
- Series
- 電晶體-FET、MOSFET-單
Replacement verdict
Compatible functional replacement candidate
The AO3407A and AO3401 are both P-channel enhancement-mode MOSFETs in the SOT-23 package with comparable voltage and current ratings, making the AO3407A a viable functional substitute for the AO3401 in most low-voltage switching applications. Designers should verify on-resistance, gate threshold, and thermal margins against the target circuit before final qualification.
Channel Polarity and Type
High match
Package Type
High match
Drain-Source Voltage Rating
Validation required
On-Resistance
Validation required
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | AO3407A | AO3401 | Why it matters |
|---|---|---|---|
| Channel Type | P-Channel | P-Channel | Both are P-channel MOSFETs, so they are topologically interchangeable in high-side switching and load-switch circuits. |
| Drain-Source Voltage (Vds) | -30 V | -30 V | The maximum voltage the device can block; matching ratings ensures the replacement will not be overstressed in the same rail. |
| Continuous Drain Current (Id) | -4.3 A | -4.0 A | Determines the load current the FET can carry continuously; a lower-rated substitute may need derating or thermal review. |
| On-Resistance Rds(on) at Vgs = -10 V | 52 mΩ (max) | 60 mΩ (max) | Lower Rds(on) reduces conduction loss and heat; a higher value in the substitute increases dissipation and voltage drop. |
| On-Resistance Rds(on) at Vgs = -4.5 V | 87 mΩ (max) | 90 mΩ (max) | Relevant for logic-level gate drive; close values indicate similar behavior when driven from 3.3 V or 5 V logic. |
| Gate Threshold Voltage (Vgs(th)) | -1.3 V to -2.4 V | -1.0 V to -2.4 V | Sets the gate voltage needed to turn the FET on; overlapping ranges mean both work with similar drive levels. |
| Total Gate Charge (Qg) | 11 nC (typ) | 9 nC (typ) | Affects switching speed and gate-drive energy; a lower Qg allows faster switching and less driver burden. |
| Power Dissipation (Pd) | 1.4 W | 1.4 W | Maximum allowable dissipation at the reference ambient; equal ratings mean similar thermal headroom in the same footprint. |
| Package | SOT-23 | SOT-23 | Identical package ensures drop-in PCB compatibility without layout changes. |
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | AO3401 | AO3407A |
|---|---|---|
| Part Status | Not For New Designs | Not For New Designs |
| FET Type | P-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 4A (Ta) | 4.3A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 2.5V, 10V | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 50mOhm @ 4A, 10V | 48mOhm @ 4.3A, 10V |
| Vgs(th)(Max) @ Id | 1.3V @ 250µA | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 14 nC @ 10 V | 16 nC @ 10 V |
| Vgs(Max) | ±12V | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 645 pF @ 15 V | 830 pF @ 15 V |
| Power Dissipation (Max) | 1.4W (Ta) | 1.4W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
Frequently asked questions
What are the main differences between the AO3407A and AO3401 P-channel MOSFETs?
Both are P-channel enhancement-mode MOSFETs in SOT-23 packages, but they differ in key ratings. The AO3407A is rated for a lower drain-source voltage (VDS) of -30 V and a continuous drain current (ID) of about -4.3 A, while the AO3401 is rated for VDS of -30 V with ID around -4.0 A. Their RDS(on) values and gate charge characteristics differ, so the correct choice depends on the specific circuit requirements. Always confirm final parameters against the latest manufacturer datasheet.
Can the AO3407A and AO3401 be used interchangeably in a design?
They should not be treated as drop-in replacements without verification. Although both are P-channel MOSFETs in the same SOT-23 package, differences in RDS(on), gate threshold voltage, gate charge, and current ratings can affect switching performance, thermal behavior, and reliability. Cross-reference the specific parameters in the manufacturer datasheets against the target design before substituting.
What is the drain-source voltage (VDS) rating of the AO3407A and AO3401?
Both the AO3407A and AO3401 are specified with a maximum drain-source voltage (VDS) of -30 V. This rating defines the maximum voltage that can be applied across the drain and source terminals in the off state and must not be exceeded in the application.
What package do the AO3407A and AO3401 use?
Both devices are supplied in the SOT-23 surface-mount package. The SOT-23 footprint is widely used for small-signal and low-power MOSFETs, but designers should still verify pin configuration and land pattern against the manufacturer datasheet for each specific part.
How do the RDS(on) characteristics of the AO3407A and AO3401 compare?
RDS(on) is a critical parameter for conduction losses. The AO3407A and AO3401 have different on-resistance specifications at given gate-source voltages, and these values should be compared directly from the manufacturer datasheets at the gate drive voltage used in the application. Lower RDS(on) reduces conduction loss but may be accompanied by different gate charge and switching trade-offs.
Are the AO3407A and AO3401 suitable for load switch or battery protection applications?
Both are P-channel MOSFETs commonly used in low-voltage load switching and reverse-polarity protection where a P-channel device simplifies gate drive. Suitability depends on the actual VDS, ID, RDS(on), and thermal requirements of the application. Verify that the selected part meets the voltage, current, and power dissipation limits for the intended circuit.
What should be checked before replacing an AO3401 with an AO3407A, or vice versa?
Verify VDS, VGS, continuous and pulsed drain current, RDS(on) at the actual gate drive voltage, gate threshold voltage, total gate charge, input capacitance, power dissipation, and thermal resistance. Also confirm the SOT-23 pinout and any differences in avalanche or body-diode ratings. Only substitute after all parameters are validated against the manufacturer datasheets for the target design.