2SB1188T100R vs 2SB1121T-TD-E

對 2SB1188T100R 和 2SB1121T-TD-E 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

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Specification 2SB1188T100R 2SB1121T-TD-E
Supplier Rohm Semiconductor onsemi
Part Status Active Active
Transistor Type PNP PNP
Current - Collector(Ic)(Max) 2 A 2 A
Voltage - Collector Emitter Breakdown(Max) 32 V 25 V
Vce Saturation(Max) @ Ib Ic 800mV @ 200mA, 2A 600mV @ 75mA, 1.5A
Current - Collector Cutoff(Max) 1µA (ICBO) 100nA (ICBO)
DC Current Gain(h FE)(Min) @ Ic Vce 180 @ 500mA, 3V 100 @ 100mA, 2V
Power - Max 2 W 500 mW
Frequency - Transition 100MHz 150MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
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