2N7002KT1G vs 2N7002V-7

對 2N7002KT1G 和 2N7002V-7 的深入比較,為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素,包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異,簡化了元件選擇,讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part B

2N7002V-7

二極體公司

Lifecycle
Active
Stock
9681 件
Package
SOT-666
Series
電晶體-FET、MOSFET-陣列

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002KT1G 2N7002V-7
Supplier - Diodes Incorporated
Part Status Active Obsolete
FET Type N-Channel 2 N-Channel (Dual)
FET Feature - Standard
Drain to Source Voltage (Vdss) 60 V 60V
Current - Continuous Drain(Id) @ 25°C 320mA (Ta) 280mA
Rds On(Max) @ Id Vgs 1.6Ohm @ 500mA, 10V 7.5Ohm @ 50mA, 5V
Vgs(th)(Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Input Capacitance(Ciss)(Max) @ Vds 24.5 pF @ 20 V 50pF @ 25V
Power - Max - 150mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Technology MOSFET (Metal Oxide) -
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V -
Gate Charge(Qg)(Max) @ Vgs 0.7 nC @ 4.5 V -
Vgs(Max) ±20V -
Power Dissipation (Max) 350mW (Ta) -