Part A
2N7002A-7
二極體公司
- Lifecycle
- Active
- Stock
- 1569 件
- Package
- SOT-23-3
- Series
- 電晶體-FET、MOSFET-單
Replacement verdict
Compatible functional replacement candidate
The 2N7002K-7 and 2N7002A-7 are both 60 V, 300 mA N-channel enhancement-mode MOSFETs in the SOT-23 package, sharing identical pinout, threshold voltage range, and small-signal switching characteristics. The 2N7002K-7 offers a lower maximum on-resistance and higher pulsed drain current capability, making it the more robust choice for demanding switching and level-shifting applications, while the 2N7002A-7 remains a cost-effective alternative for general-purpose low-current designs. Both devices are functionally interchangeable in most circuits, though designers should verify thermal and pulsed-current margins when substituting the 2N7002A-7 into high-stress applications originally specified with the 2N7002K-7.
Drain-Source Voltage Rating
High match
Continuous Drain Current
High match
Package Type
High match
On-Resistance
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002A-7 | 2N7002K-7 |
|---|---|---|
| Part Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 180mA (Ta) | 380mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 5V, 10V | 5V, 10V |
| Rds On(Max) @ Id Vgs | 6Ohm @ 115mA, 5V | 2Ohm @ 500mA, 10V |
| Vgs(th)(Max) @ Id | 2V @ 250µA | 2.5V @ 1mA |
| Vgs(Max) | ±20V | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 23 pF @ 25 V | 50 pF @ 25 V |
| Power Dissipation (Max) | 370mW (Ta) | 370mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Gate Charge(Qg)(Max) @ Vgs | - | 0.3 nC @ 4.5 V |