2N7002E vs 2N7002DW

對 2N7002E 和 2N7002DW 的深入比較,為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素,包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異,簡化了元件選擇,讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002DW and 2N7002E are both 60 V logic-level N-channel MOSFETs sharing the same SOT-363 (SC-88) package and similar RDS(on) characteristics, making the 2N7002DW a viable functional replacement candidate for the 2N7002E in most low-power switching applications. However, the 2N7002DW integrates two electrically isolated MOSFETs in a single package, whereas the 2N7002E is a single-device part, so designers must account for the dual-channel configuration and verify continuous current and thermal derating against the target circuit requirements before substituting.

Channel Configuration High match
Package Type High match
Continuous Drain Current Validation required
Drain-Source Voltage Validation required

Parts at a glance

Part A

2N7002E

松下電子元件

Lifecycle
Active
Stock
3552 件
Package
SOT-23-3
Series
電晶體-FET、MOSFET-單

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002E 2N7002DW
Part Status Obsolete Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60V
Current - Continuous Drain(Id) @ 25°C 300mA (Ta) -
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V -
Rds On(Max) @ Id Vgs 3Ohm @ 100mA, 10V -
Vgs(th)(Max) @ Id 3V @ 250µA -
Gate Charge(Qg)(Max) @ Vgs 0.8 nC @ 4.5 V -
Vgs(Max) ±20V -
Input Capacitance(Ciss)(Max) @ Vds 40 pF @ 10 V -
Power Dissipation (Max) 350mW (Ta) -
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Base Product Number - 2N7002
Configuration - 2 N-Channel (Dual)
FET Feature - Logic Level Gate
Current - Continuous Drain (Id) @ 25°C - 115mA
Rds On (Max) @ Id, Vgs - 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id - 2V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds - 50pF @ 25V
Power - Max - 200mW
Packaging - Cut Tape (CT), Tape & Reel (TR)