2N7002CK vs 2N7002V

對 2N7002CK 和 2N7002V 的深入比較,為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素,包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異,簡化了元件選擇,讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002CK and 2N7002V are both N-channel enhancement-mode MOSFETs in SOT-23 packages with comparable voltage and current ratings, making the 2N7002CK a viable functional substitute for the 2N7002V in most low-power switching applications. However, designers should verify gate threshold voltage, on-resistance, and input capacitance tolerances against the target circuit's drive and timing requirements before committing to a drop-in replacement.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
On-Resistance Validation required
Gate Threshold Voltage Validation required

Parts at a glance

Part A

2N7002CK

Nexperia美國公司

Lifecycle
Active
Stock
1570 件
Package
SOT-23-3
Series
電晶體-FET、MOSFET-單
Part B

2N7002V

飛兆電晶體公司

Lifecycle
Active
Stock
4358 件
Package
SOT-666
Series
電晶體-FET、MOSFET-陣列

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002CK 2N7002V
Supplier - Rochester Electronics, LLC
Part Status Active Active
FET Type - 2 N-Channel (Dual)
FET Feature - Logic Level Gate
Drain to Source Voltage (Vdss) - 60V
Current - Continuous Drain(Id) @ 25°C - 280mA
Rds On(Max) @ Id Vgs - 7.5Ohm @ 50mA, 5V
Vgs(th)(Max) @ Id - 2.5V @ 250µA
Input Capacitance(Ciss)(Max) @ Vds - 50pF @ 25V
Power - Max - 250mW
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type - Surface Mount