2N7002 vs 2N7001TQDCKRQ1

對 2N7002 和 2N7001TQDCKRQ1 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Not a drop-in replacement

The 2N7001TQDCKRQ1 is not a drop-in replacement for the 2N7002. While both are N-channel MOSFETs, they differ fundamentally in threshold voltage class, on-resistance, current handling, and package footprint, requiring circuit redesign and layout changes.

Different threshold voltage class Different on-resistance Different current rating Different package footprint

Parts at a glance

Part A

2N7002

意法半導體

Lifecycle
Active
Stock
1470 件
Package
SOT-23
Series
電晶體-FET、MOSFET-單
+物料清單 詢價

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002 2N7001TQDCKRQ1
Supplier - Texas Instruments
Series STripFET™ Automotive, AEC-Q100
Part Status Obsolete Active
Translator Type - Voltage Level
Channel Type - Unidirectional
Number of Circuits - 1
Channelsper Circuit - 1
Voltage - VCCA - 1.65 V ~ 3.6 V
Voltage - VCCB - 1.65 V ~ 3.6 V
Input Signal - CMOS
Output Signal - CMOS
Output Type - Push-Pull
Data Rate - 100Mbps
Operating Temperature -55°C ~ 150°C (TJ) -40°C ~ 125°C (TA)
Mounting Type Surface Mount Surface Mount
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 60 V -
Current - Continuous Drain(Id) @ 25°C 200mA (Tc) -
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V -
Rds On(Max) @ Id Vgs 5Ohm @ 500mA, 10V -
Vgs(th)(Max) @ Id 3V @ 250µA -
Gate Charge(Qg)(Max) @ Vgs 2 nC @ 5 V -
Vgs(Max) ±18V -
Input Capacitance(Ciss)(Max) @ Vds 43 pF @ 25 V -
Power Dissipation (Max) 350mW (Tc) -
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